5 SIMPLE TECHNIQUES FOR GERMANIUM

5 Simple Techniques For Germanium

s is that with the substrate product. The lattice mismatch causes a large buildup of pressure Vitality in Ge layers epitaxially grown on Si. This strain Strength is generally relieved by two mechanisms: (i) technology of lattice dislocations with the interface (misfit dislocations) and (ii) elastic deformation of each the substrate and the Ge islan

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optical germanium lens - An Overview

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